triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information may 23, 2002 1 10 gb/s differential transimpedance amplifier TGA4805-EPU primary applications ? oc192/stm-64 fiber-optic systems typical measured performance key features ? 0.25 um phemt technology ? frequency range; 30 khz to > 11ghz ? 1000 w differential transimpedance ? average input eq. noise: 9 pa / ? hz ? single supply operation : +5v @ 45 ma ? chip size: 1.1 x 0.91 mm note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. description the triquint TGA4805-EPU is a wideband transimpedance amplifier with differential outputs that provides 500 ohm single-ended transimpedance into a 50 ohm termination (1000 ohm differential into a 100 ohm termination). typical output return loss is > 15 db and the average equivalent input noise current is 9 pa/ ? hz (1 ghz to 10 ghz). typical 3db bw is 30 khz to 11ghz with 0.2 pf of photodiode capacitance. the tga4805 operates from a single +5v supply typically dissipating 225mw of dc power. the device is backside grounded with vias and requires no grounding bond wires. the tga4805 requires off-chip decoupling and the rf ports are dc coupled. each device is 100% rf tested on-wafer to ensure performance compliance. the device is available in die form. -10 0 10 20 30 40 50 60 13579111315 frequency (ghz) group delay ripple (ps) cpd = 0.2 pf rpd = 10 ohm 33 36 39 42 45 48 51 54 57 60 63 1 3 5 7 9 11 13 15 frequency (ghz) transimpedance (db-ohm) -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 output return loss (db) differential tz (db-ohm) s22 inverting output s22 noninverting output cpd = 0.2 pf rpd = 10 ohm
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information may 23, 2002 2 TGA4805-EPU table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage +6.0v i + positive supply current 60 ma 2/ p d power dissipation 360 mw p in input continuous wave power +15 dbm t ch operating channel temperature 150 c 3/, 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these values represent the maximum operable values of this device 2/ total current for the entire mmic 3/ these ratings apply to each individual fet 4/ junction operating temperature will directly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. p aram eter u nits c ondition typical transimpedance db w single-ended, rl=50 w 54 transimpedance ripple dbpp 1 ghz to 10 ghz cpd=0.2pf, rpd=10 w 2 upper 3db bandwidth ghz cpd=0.2pf, rpd=10 w 11 lower 3db bandwidth* khz cpd=0.2pf, rpd=10 w 30 group delay ripple ps 1 ghz to 8 ghz cpd=0.2pf, rpd=10 w +10 e q. input n oise c urrent pa/ ? hz ave: 1 ghz to 10 ghz cpd=0.2pf 9 output return loss db 30 khz to 12 ghz 15 supply voltage v 5.0 supply current ma 45 table ii electrical characteristics (ta = 25 o c 5 o c) vd = 5v * set by off-chip capacitance note: electrical parameters are calculated for a photodiode equivalent circuit of 0.2pf and 10 w
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information may 23, 2002 3 TGA4805-EPU 33 36 39 42 45 48 51 54 57 60 63 1 3 5 7 9 11 13 15 frequency (ghz) transimpedance (db-ohm) -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 output return loss (db) differential tz (db-ohm) s22 inverting output s22 noninverting output cpd = 0.2 pf rpd = 10 ohm -10 0 10 20 30 40 50 60 13579111315 frequency (ghz) group delay ripple (ps) cpd = 0.2 pf rpd = 10 ohm measured fixtured data note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information may 23, 2002 4 chip assembly and bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4805-EPU rf in + 5v voffset adjust 0.1 m f - rf out + rf out 0.1 m f 0.1 m f
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information may 23, 2002 5 mechanical drawing note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4805-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information may 23, 2002 6 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4805-EPU assembly process notes reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c.
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